Specimen Preparation Considerations for 2D Dopant Profile Determination in Semiconductor Devices by Electron Holography
نویسندگان
چکیده
منابع مشابه
2D-mapping of dopant distribution in deep sub micron CMOS devices by electron holography using adapted FIB-preparation.
Transmission electron microscopy (TEM) is a widely used tool for analysis of very large scale integrated (VLSI) semiconductor devices. As a special TEM-feature, off-axis electron holography obtains information about the electrical characteristics of a specimen, which are connected to the dopant concentration in the bulk material. Compared with conventional TEM, application of electron holograph...
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In general the SEM sample preparation techniques are more or less similar to the metallographic sample preparation technique for optical microscopy, because both the microscopes reveals the surface topography of sample. In SEM a focussed beam of electrons scans over the specimen surface and the electrons emitted from the sample surface controls the brightness of the CRT spot which also scans th...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2003
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927603444061